The Intense INSlamT S family of products revolutionizes the delivery of laser energy, reducing complexity and delivering unrivalled cost savings and significant reliability increases for industrial and defense applications. A compact, flexible design, the INSlam S module combines high quality optical output with a small footprint, providing the flexibility needed to create innovative products. The high performance, reduced form factor, and affordability of an integrated multi-element system, make INSlam S an excellent choice for the most demanding applications. The modules have been used as a direct optical energy source for a diverse range of tasks, including communications, materials processing, and countermeasure systems. The INSlam S provides you with: - Reduced complexity, lower cost, and high reliability
- Precise delivery of optical energy where it's needed, increasing unit efficiency and operating lifetime
- A compact package that includes optical, electronic, and thermal management components
- An easy and affordable way to integrate multiple laser emitters into a single modular package
Features of the INSlamT S familyThe INSlamT S module contains individually addressable single mode lasers arrays of up to 100 emitters on a single monolithic chip. It is available at a number of wavelengths to suit the specific application. Whatever wavelength is required, Intense's advanced Quantum Well Intermixing (QWI) process provides the reliability needed to meet market demands. The module includes the laser array and, if required, drive electronics, optical monitoring, and micro and/or macro optics. This means a single compact unit can replace a much larger traditional sub-system giving reduced complexity and increased cost savings. The modules are effective with an individual pitch as low as 70 microns and power range of 30 mW to 200 mW. The INSlam S can be custom designed to suit any application or system. Typical configurations include as a medium sized array (up to 20 elements) in a simple, sealed butterfly package or as a 48 element array on a cooled mount with specially designed optics and electronics and a sealing lid. INSlamT Imager S
| Laser power ex-facet | Up to 200 mW (cw - all emitters on) | | Beam quality | Single mode | | Wavelength | 8xx nm and 9xx nm | | Lifetime per emitter | 10,000 hours | | Threshold current | up to 50 mA | | Slope Efficiency | >0.7 W/A | | Emitter number per chip | 48 as standard; up to 100 individual lasers on a single chip | | Laser bar structure | Common n-contact, individual wire bonded p-contacts | | Emitter pitch | ≤100 µm for high power, down to 80 µm for low power | | Vertical far-field | 18-30°depending on laser chip design | | Horizontal far-field | 4-12° depending on laser chip design | | Smile | <2 µm | | Optics | Custom designed for specific applications | | Electronics | Custom designed for specific applications |
The Intense Evaluation Kit allows fast, low cost assessment of this product's laser array performance.
|