THz-Camera

Terahertz imaging cameras

- New physical principle employed

- Operates at frequencies (0.05 – 0.7 THz), where most common materials are transparent

256, 1024, 4096 pixels models are available - to accomodate any budget

-    USB feeding and programming

-    1.5 year warranty

The detectors are fabricated from GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity is within 20-percent range). Each unit detector proved to have room-temperature responsivity up to 50 kV/W with read-out circuitry and noise equivalent power 1 nW/(Hz)^1/2 in the frequency range 10 GHz - 1 THz. The detection mechanism is based on transformation of incident THz radiation into two-dimensional electron system (2DES) plasma oscillation. Plasma wave is then rectified on the inhomogeneity of 2DES electron density in the defect region.

Tera-256

• 256 pixels (16 x 16 array)
• 1.5 x 1.5 mm pixel size
• 50 kV/W responsivity with NEP=1 nW/(Hz)^1/2
• 10 cm x 10 cm x 5.5 cm device size

Tera-1024

• 1024 pixels (32 x 32 array)
• 1.5 x 1.5 mm pixel size
• 50 kV/W responsivity with NEP=1 nW/(Hz)^1/2
• 10 cm x 10 cm x 5.5 cm device size

Tera-4096

• 4096 pixels (64 x 64 array)
• 1.5 x 1.5 mm pixel size
• 50 kV/W responsivity with NEP=1 nW/(Hz)^1/2
• 20 cm x 20 cm x 10 cm device size

TeraFast-256

 (High Speed THz Line Scanner)

• Image acquisition rate: 5000 fps (5 KHz)
• Scanning speed: up to 15 m/sec (900 m/min)
• Min detectable power/pixel: 100 nW (at 5000 fps)
• 256 pixels (256 x 1 array) - scalable in size
• 3 x 1.5 mm pixel size
• 8000 V/W responsivity with NEP=1 nW/(Hz)^1/2

Demonstration of THz imaging: